The Effect of Annealing on the Electrical Properties of Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE

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Abstract
The effect of annealing on the electrical properties of selectively doped GaAs/N-AlGaAs heterojunction structures grown by MBE has been studied. Very high electron mobility in this structure at 77 K decreased considerably after annealing at about 700°C. However, it remained at a high value even after annealing when the Si doping concentration in N-AlGaAs was reduced to about 1×1018 cm-3. These results are discussed in terms of diffusion of Si impurities doped in N-AlGaAs.