Energy distribution of electron-trapping centers in low pressure chemically vapor-deposited Si3N4 films

This publication has 14 references indexed in Scilit:

• Valence alternation pair model of charge storage in MNOS memory devices
  Journal of Applied Physics, 1979
• Metal-nitride-oxide-semiconductor transistor characterization using implanted MNOS capacitors
  Thin Solid Films, 1979
• A review of the techniques used to determine trap parameters in the MNOS structure
  IEEE Transactions on Electron Devices, 1977
• Discharge of MNOS structures at elevated temperatures
  Solid-State Electronics, 1976
• Memory traps in MNOS diodes measured by thermally stimulated current
  Solid-State Electronics, 1976
• Interface instability of r.f. sputtered silicon nitride films on silicon
  Thin Solid Films, 1974
• Electrical Properties of Vapor-Deposited Silicon Nitride Films Measured in Strong Electric Fields
  Journal of the Electrochemical Society, 1973
• Characterization of thin-oxide MNOS memory transistors
  IEEE Transactions on Electron Devices, 1972
• The conduction processes in silicon nitride
  Canadian Journal of Physics, 1968
• Electrical Properties of Vapor-Deposited Silicon Nitride and Silicon Oxide Films on Silicon
  Journal of the Electrochemical Society, 1968