Million-Atom Pseudopotential Calculation of-Mixing inSuperlattices and Quantum Dots
- 7 April 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 78 (14) , 2819-2822
- https://doi.org/10.1103/physrevlett.78.2819
Abstract
We have developed a “linear combination of bulk bands” method that permits atomistic, pseudopotential electronic structure calculations for atom nanostructures. Application to (001) superlattices (SL's) reveals even-odd oscillations in the coupling magnitude , which vanishes for , even for abrupt and segregated SL's, respectively. Surprisingly, in contrast with recent expectations, 0D quantum dots are found here to have a smaller coupling than equivalent 2D SL's. Our analysis shows that for large quantum dots this is largely due to the existence of level repulsion from many states.
Keywords
This publication has 24 references indexed in Scilit:
- High pressure study of Γ-X mixing in InAs/GaAs quantum dotsJournal of Physics and Chemistry of Solids, 1995
- Direct-to-Indirect Crossover in Semiconductor Alloys: A First-Order Phase Transition?Physical Review Letters, 1995
- Absorption coefficient in type-II GaAs/AlAs short-period superlatticesPhysical Review B, 1994
- Γ-X mixing effects on photoluminescence intensity in GaAs/AlAs type-II superlatticesSolid State Communications, 1993
- Electronic structure of GaAs/AlAs symmetric superlattices: A high-pressure study near the type-I–type-II crossoverPhysical Review B, 1990
- Γ-Xmixing in the miniband structure of a GaAs/AlAs superlatticePhysical Review Letters, 1989
- Indirect-direct anticrossing in GaAs-AlAs superlattices induced by an electric field: Evidence of Γ-X mixingPhysical Review Letters, 1988
- Pressure dependence of the direct absorption edge of InPPhysical Review B, 1980
- Dependence of the direct energy gap of GaAs on hydrostatic pressurePhysical Review B, 1975
- Photoluminescence Processes inat 2°KPhysical Review B, 1971