Electric field heated electrons in a-Si:H — new features
- 1 May 1996
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 198-200, 202-205
- https://doi.org/10.1016/0022-3093(95)00687-7
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
- Hot Electrons in Amorphous SiliconPhysical Review Letters, 1995
- Charge Transport in Disordered Organic Photoconductors a Monte Carlo Simulation StudyPhysica Status Solidi (b), 1993
- High-electric-field transport ina-Si:H. I. Transient photoconductivityPhysical Review B, 1992
- The properties of free carriers in amorphous siliconJournal of Non-Crystalline Solids, 1992
- Nonlinear photocarrier drift in hydrogenated amorphous silicon-germanium alloysPhysical Review B, 1991
- Field dependence of the low temperature quantum efficiency, mobility and (μ τ) — product in a-Si:HJournal of Non-Crystalline Solids, 1991
- Electron drift mobility in a-Si : H under extremely high electric fieldSolid State Communications, 1990
- Temperature and electric field dependence of the picosecond electron drift velocity in a-Si:HJournal of Non-Crystalline Solids, 1989
- A physical interpretation of dispersive transport in disordered semiconductorsSolid State Communications, 1981
- Drift mobilities in amorphous charge-transfer complexes of trinitrofluorenone and poly-n-vinylcarbazoleJournal of Applied Physics, 1972