Nonlinear dependencies of Si diffusion in δ-doped GaAs
- 16 September 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (12) , 1452-1454
- https://doi.org/10.1063/1.105285
Abstract
We examine atomic diffusion of Si, when initially δ doped into very pure GaAs layers grown by gas source molecular beam epitaxy. A nonlinear Si diffusion coefficient versus inverse temperature is observed as a two-component Arrhenius dependence in which the activation energies change by 1.5 eV. Furthermore, when Si diffusion is thermally activated with the lower energy kinetics, the corresponding impurity profile grows in width linearly with the anneal time. We explain the above departures of measured Si diffusivity from classical impurity diffusion via a nonequilibrated concentration of vacancies generated at the δ position during the anneal.Keywords
This publication has 9 references indexed in Scilit:
- Atom diffusion and impurity-induced layer disordering in quantum well III-V semiconductor heterostructuresJournal of Applied Physics, 1988
- Diffusion studies of the Si δ-doped GaAs by capacitance-voltage measurementJournal of Applied Physics, 1988
- Diffusion of atomic silicon in gallium arsenideApplied Physics Letters, 1988
- Spatial localization of impurities in δ-doped GaAsApplied Physics Letters, 1988
- Background doping dependence of silicon diffusion in p-type GaAsApplied Physics Letters, 1987
- Electronic Structure, Total Energies, and Abundances of the Elementary Point Defects in GaAsPhysical Review Letters, 1985
- Diffusion of silicon in gallium arsenide using rapid thermal processing: Experiment and modelApplied Physics Letters, 1984
- The Effect of Stress on the Redistribution of Implanted Impurities in GaAsJournal of the Electrochemical Society, 1983
- Sources of Thermally Generated Vacancies in Single-Crystal and Polycrystalline GoldPhysical Review B, 1965