The capacitance of abrupt p-n junction diodes under forward bias
- 16 September 1973
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 19 (1) , K93-K96
- https://doi.org/10.1002/pssa.2210190163
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Application of the transmission line equivalent circuit model to the analysis of the PN junction admittance under d.c. biasSolid-State Electronics, 1973
- An analysis of the frequency dependence of the capacitance of abrupt P−N junction semiconductor devicesSolid-State Electronics, 1970
- Investigation of the reactive properties of diffused Si p-n junctions in the region of high injection levels and strong electric fieldsSolid-State Electronics, 1968
- Impedance of Bulk Semiconductor in Junction DiodeJournal of the Physics Society Japan, 1957