Observations of dislocations and junction irregularities in bipolar transistors using the E.B.I.C. mode of the scanning electron microscope
- 1 January 1979
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 22 (1) , 105-110
- https://doi.org/10.1016/0038-1101(79)90179-5
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Effects of dislocations in silicon transistors with implanted basesSolid-State Electronics, 1977
- Observation of dislocations in a silicon phototransistor by scanning electron microscopy using the barrier electron voltaic effectSolid-State Electronics, 1976
- Investigation of defects and striations in as-grown Si crystals by SEM using Schottky diodesApplied Physics Letters, 1975
- Direct observation of electrical faults in planar transistors made in epitaxially grown siliconSolid-State Electronics, 1968
- Effects of High Phosphorus Concentration on Diffusion into SiliconJournal of the Electrochemical Society, 1968