Novel current-voltage characteristics of an InP-based resonant-tunneling high electron mobility transistor and their circuit applications
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 379-382
- https://doi.org/10.1109/iedm.1995.499219
Abstract
We report novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor (RTHEMT). The RTHEMT incorporates a resonant-tunneling diode structure into the source region of a HEMT. A near-flat valley current is obtained in the current-voltage characteristics. This unique feature leads to the observation of negative transconductance throughout a wide range of source-drain bias. Using a simple circuit that combines an RTHEMT with a resistor load, we demonstrate frequency multipliers (both doubler and tripler) and a three-valued logic inverse literal gate.Keywords
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