Conduction-Valence Landau Level Mixing Effect

The electronic Landau level structures of the symmetric $\mathrm{Alsb}-{\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{Sb}-\mathrm{InAs}-{\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{Sb}-\mathrm{AlSb}$ quantum wells are investigated within a six-band $\mathbf{k}̇\mathbf{p}$ finite difference method. We demonstrated that the conduction-valence Landau level mixing can yield a significant spin splitting for the InAs conduction-band electrons and therefore produce a prominent electron double-line structure with a nearly field-independent energy separation in the cyclotron-resonance spectra. This mixing effect can also yield strong oscillations in the electron cyclotron-resonance mass, amplitude, and linewidth.