Band-structure effects in AlSb-InAs-AlSb double-barrier structures
- 11 April 1994
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (15) , 1956-1958
- https://doi.org/10.1063/1.111754
Abstract
This letter reports the study of the resonant‐tunneling characteristics of the AlSb‐InAs‐AlSb double‐barrier structures within a second‐neighbor sp3 bond‐orbital model. The model employs one s‐like antibonding orbital and 3 p‐like bonding orbitals per unit site and is capable of describing the lowest conduction band accurately throughout the entire Brillouin zone. The current‐voltage curve thus obtained, compared to those obtained using the nearest‐neighbor sp3 bond‐orbital model or those obtained from the two‐band model, gives a much better agreement with the experiment.Keywords
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