Potentials and direct current in Si-(20 to 40 Å)SiO2-metal structures
- 31 August 1972
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 15 (8) , 869-875
- https://doi.org/10.1016/0038-1101(72)90023-8
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Interface states in MOS structures with 20–40 Å thick SiO2 films on nondegenerate SiSolid-State Electronics, 1972
- METAL-DEPENDENT INTERFACE STATES IN THIN MOS STRUCTURESApplied Physics Letters, 1971
- Theory of tunneling into interface statesSolid-State Electronics, 1970
- Barrier energies in metal-silicon dioxide-silicon structuresJournal of Physics and Chemistry of Solids, 1966
- Surface States and Rectification at a Metal Semi-Conductor ContactPhysical Review B, 1947