High-quality gate-oxide films for MOSFET's deposited by oxygen-argon sputtering
- 1 September 1988
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 33-34, 1236-1243
- https://doi.org/10.1016/0169-4332(88)90440-0
Abstract
No abstract availableKeywords
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