Observation of sphere resonance peak in ferromagnetic GaN:Mn
- 24 June 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 82 (26) , 4749-4751
- https://doi.org/10.1063/1.1588741
Abstract
We report temperature-dependent optical spectra of ferromagnetic Mn-doped GaN in a wide photon energy region of 5 meV–4 eV. Below the GaN gap, an absorption peak around 1.25 eV whose intensity increases at lower temperatures was observed. A composite medium theory, called the Maxwell–Garnett theory, shows that the absorption peak can be assigned to a sphere resonance from metallic particles embedded in a Mn-doped GaN matrix. We also report that the far-infrared absorption of Mn-doped GaN sample was very small. This result suggests that itinerant carrier-mediated ferromagnetism does not fully explain the observed magnetic properties.Keywords
This publication has 21 references indexed in Scilit:
- Giant Magnetic Moments of Nitrogen-Doped Mn Clusters and their Relevance to Ferromagnetism in Mn-Doped GaNPhysical Review Letters, 2002
- Polaron Percolation in Diluted Magnetic SemiconductorsPhysical Review Letters, 2002
- Magnetic properties of n-GaMnN thin filmsApplied Physics Letters, 2002
- Magnetic and transport characteristics on high Curie temperature ferromagnet of Mn-doped GaNJournal of Applied Physics, 2002
- Optical properties of the deep Mn acceptor in GaN:MnApplied Physics Letters, 2002
- Optical Absorption and Temperature-Dependent Resistivity of GaMnN Grown by Molecular Beam EpitaxyElectrochemical and Solid-State Letters, 2002
- Effects of Disorder on Ferromagnetism in Diluted Magnetic SemiconductorsPhysical Review Letters, 2001
- Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic SemiconductorsScience, 2000
- Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductorPhysical Review B, 1997
- (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAsApplied Physics Letters, 1996