Optical Absorption and Temperature-Dependent Resistivity of GaMnN Grown by Molecular Beam Epitaxy
- 1 January 2002
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 5 (11) , G103-G105
- https://doi.org/10.1149/1.1511343
Abstract
GaMnN layers grown by molecular beam epitaxy were characterized by current-voltage, temperature-dependent resistivity, and optical absorption measurements. Transitions from the Mn acceptors to the conduction band were observed in optical absorption spectra, corresponding to an energy level of Electrical measurements showed the material to be high resistivity n-type for the 3 atom % Mn concentration, with the Fermi level controlled by defects or impurities with an activation energy of 0.1 eV. Under these conditions, the GaMnN showed the highest degree of ordering per Mn atom in magnetometry measurements. © 2002 The Electrochemical Society. All rights reserved.This publication has 19 references indexed in Scilit:
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