Real Time Measurement of Epilayer Strain Using a Simplified Wafer Curvature Technique
- 1 January 1995
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Suppression of strain relaxation and roughening of InGaAs on GaAs using ion-assisted molecular beam epitaxyApplied Physics Letters, 1994
- Strain relaxation in Ge0.09Si0.91 epitaxial thin films measured by wafer curvatureJournal of Electronic Materials, 1991
- Relaxation of strained InGaAs during molecular beam epitaxyApplied Physics Letters, 1990
- Mechanical stresses in (sub)monolayer epitaxial filmsPhysical Review Letters, 1990
- The driving force for glide of a threading dislocation in a strained epitaxial layer on a substrateJournal of the Mechanics and Physics of Solids, 1990
- Elastic relationships in layered composite media with approximation for the case of thin films on a thick substrateJournal of Applied Physics, 1987
- Measurement and Interpretation of stress in aluminum-based metallization as a function of thermal historyIEEE Transactions on Electron Devices, 1987
- The tension of metallic films deposited by electrolysisProceedings of the Royal Society of London. Series A, Containing Papers of a Mathematical and Physical Character, 1909