Model for drain current RTS amplitude in small-area MOS transistors

This publication has 10 references indexed in Scilit:

• Observation of random telegraph signals: Anomalous nature of defects at the Si/SiO2 interface
  Journal of Applied Physics, 1990
• Random telegraph noise of deep-submicrometer MOSFETs
  IEEE Electron Device Letters, 1990
• Existence of Double-Charged Oxide Traps in Submicron MOSFET's
  Japanese Journal of Applied Physics, 1989
• On the theory of carrier number fluctuations in MOS devices
  Solid-State Electronics, 1989
• A physical model for random telegraph signal currents in semiconductor devices
  Journal of Applied Physics, 1989
• Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
  Advances in Physics, 1989
• Individual oxide traps as probes into submicron devices
  Applied Physics Letters, 1988
• 1/f and random telegraph noise in silicon metal-oxide-semiconductor field-effect transistors
  Applied Physics Letters, 1985
• Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (1f?) Noise
  Physical Review Letters, 1984
• Theory of low frequency noise in Si MOST's
  Solid-State Electronics, 1970