The Effects of Reverse Injection Current on High a Quality InSb Photovoltaic Detector

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Abstract
This paper presents the fabrication and characterization of high-quality InSb p+-n photovoltaic detectors. The reverse dark current of the detector at small reverse bias is dominated by the generation-recombination current and shunt current. We also present, for the first time, the effects of the reverse injection current on the detector. The breakdown voltage of the detector increases after the injection process. However, the dark current at small reverse bias (-200 mV) increases and then decreases with increase of the reverse injection current. This result may be due to the hole trapping in the passivation layer during the injection process.