Photoluminescence study of GaAs films on Si(100) grown by atomic hydrogen-assisted molecular beam epitaxy
- 1 March 1994
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 23 (3) , 331-335
- https://doi.org/10.1007/bf02670643
Abstract
No abstract availableKeywords
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