ZnS/ZnSe/GaAs heterostructures grown by metal-organic vapour phase epitaxy
- 15 July 1991
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 9 (1-3) , 189-193
- https://doi.org/10.1016/0921-5107(91)90170-z
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Properties of ZnSe/ZnS grown by MOVPE on a rotating substratePublished by SPIE-Intl Soc Optical Eng ,1991
- Electrical characterization of p-type ZnSeApplied Physics Letters, 1989
- A novel MOVPE reactor with a rotating substrateJournal of Crystal Growth, 1988
- Low-loss short-wavelength optical waveguides using ZnSe-ZnS strained-layer superlatticesApplied Physics Letters, 1988
- Low-loss MOVPE-grown ZnSeZnS superlattice optical waveguideJournal of Crystal Growth, 1988
- Selectively embedded epitaxial growth of ZnSe by low-pressure MOCVD using dimethylzinc and dimethylseleniumJournal of Crystal Growth, 1988
- High quality ZnSe films grown by low pressure metalorganic vapor phase epitaxy using methylalkylsApplied Physics Letters, 1987
- Determination of the onset of plastic deformation in ZnSe layers grown on (100) GaAs by molecular-beam epitaxyJournal of Applied Physics, 1987
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Coherent Growth of ZnSe on GaAs by MOCVDJapanese Journal of Applied Physics, 1985