High performance RF characteristics of raised gate/source/drain CMOS with Co salicide
- 27 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Sub-100 nm gate length metal gate NMOS transistors fabricated by a replacement gate processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Low resistance Ti or Co salicided raised source/drain transistors for sub-0.13 μm CMOS technologiesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A high-performance 0.1 μm CMOS with elevated salicide using novel Si-SEG processPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002