Usage of HBTs beyond BV/sub cec/
- 13 December 2005
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Silicon-germanium BiCMOS HBT technology for wireless power amplifier applicationsIEEE Journal of Solid-State Circuits, 2004
- The maximum operating region in SiGe HBTs for RF power amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistorsIEEE Transactions on Electron Devices, 2001
- Ionization Rates for Holes and Electrons in SiliconPhysical Review B, 1957