Generalized transconductance and transresistance methods for MOSFET characterization
- 1 January 1989
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 32 (1) , 77-86
- https://doi.org/10.1016/0038-1101(89)90051-8
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- On the accuracy of channel length characterization of LDD MOSFET'sIEEE Transactions on Electron Devices, 1986
- Geometry effects in MOSFET channel length extraction algorithmsIEEE Electron Device Letters, 1985
- Source-and-drain series resistance of LDD MOSFET'sIEEE Electron Device Letters, 1984
- Accuracy of an effective channel length/External resistance extraction algorithm for MOSFET'sIEEE Transactions on Electron Devices, 1984
- Experimental derivation of the source and drain resistance of MOS transistorsIEEE Transactions on Electron Devices, 1980
- The effects of two-dimensional charge sharing on the above-threshold characteristics of short-channel IGFETSSolid-State Electronics, 1979
- A New Method to Determine Effective MOSFET Channel LengthJapanese Journal of Applied Physics, 1979
- MOS modelling by analytical approximations. I. Subthreshold current and threshold voltageInternational Journal of Electronics, 1979