Effects of |H2Se|/|DMZn| Molar Ratio on Epitaxial ZnSe Films Grown by Low-Pressure MOCVD
- 1 October 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (10A) , L773
- https://doi.org/10.1143/jjap.23.l773
Abstract
Effects of the |H2Se|/|DMZn| molar ratio on the electrical and optical properties of nominally undoped ZnSe films grown on (100) GaAs substrates by low-pressure MOCVD have been studied. It was found that the carrier concentration in the films decreases with the molar ratio, while the luminescence intensity ratio between the NBE emission and that from deep centers increases. Furthermore, the distance between an inlet nozzle for DMZn and the substrate was found to give qualitatively the same effects to the properties of ZnSe films as those by the molar ratio.Keywords
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