Microscopic analysis of optical gain in InGaN∕GaN quantum wells
- 9 January 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (2)
- https://doi.org/10.1063/1.2164907
Abstract
A microscopic theory is used to analyze optical gain in InGaN/GaN quantum wells (QW). Experimental data are obtained from Hakki–Paoli measurements on edge-emitting lasers for different carrier densities. The simulations are based on the solution of the quantum kinetic Maxwell–Bloch equations, including many-body effects and a self-consistent treatment of piezoelectric fields. The results confirm the validity of a QW gain description for this material system with a substantial inhomogeneous broadening due to structural variation. They also give an estimate of the nonradiative recombination rateKeywords
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