The simulation of epitaxy, sublimation, and annealing processes in a 3D silicon surface layer

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Abstract
The Monte Carlo model for simulating epitaxy, sublimation, and annealing of the (111) surface of a diamond-like crystal is developed. The model accounts for the so-called overhanging structures and allows one to consider a 3D surface layer with a complex structure and volume comprising as many as 107 atom sites. The initial stage of epitaxial growth on smooth as well as on porous surfaces and the annealing of both step-containing and porous surfaces are simulated. The effect of Schwoebel barriers on the formation of compact 3D islands during epitaxy is suggested as a possible kinetic mechanism for quantum-dot formation. The sublimation behavior of monatomic steps on the (111) surfaces of a diamond-like crystal is also studied.