Thermal Stress Relaxation in GaAs Layer on New Thin Si Layer over Porous Si Substrate Grown by Metalorganic Chemical Vapor Deposition
- 1 November 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (11B) , L1354
- https://doi.org/10.1143/jjap.37.l1354
Abstract
We have proposed and introduced a thin Si layer over porous Si (SPS) substrate instead of the conventionally used Si substrate to overcome the residual thermal stress in GaAs layer on Si substrate (GaAs/Si). From the results of X-ray diffraction, low-temperature photoluminescence and Raman scattering, it was found that a significant reduction of the residual thermal tensile stress has been achieved. Our data clearly show that the SPS substrate is a promising substrate for overcoming the problems in GaAs/Si.Keywords
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