Experimental characterization of electron-hole generation in silicon carbide
- 1 May 1996
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (5) , 899-907
- https://doi.org/10.1007/bf02666656
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- The effect of thermal processing on polycrystalline silicon/SiO2/6H–SiC metal-oxide-semiconductor devicesApplied Physics Letters, 1996
- Monolithic NMOS digital integrated circuits in 6H-SiCIEEE Electron Device Letters, 1994
- A vertically integrated bipolar storage cell in 6H silicon carbide for nonvolatile memory applicationsIEEE Electron Device Letters, 1994
- Performance limiting micropipe defects in silicon carbide wafersIEEE Electron Device Letters, 1994
- 6H-silicon carbide devices and applicationsPhysica B: Condensed Matter, 1993
- Dynamic charge storage in 6H silicon carbideApplied Physics Letters, 1992
- One-transistor GaAs MESFET- and JFET-accessed dynamic RAM cells for high-speed medium density applicationsIEEE Transactions on Electron Devices, 1990
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967