Progress towards high power thin film diamond transistors
- 31 March 1999
- journal article
- Published by Elsevier in Diamond and Related Materials
- Vol. 8 (2-5) , 966-971
- https://doi.org/10.1016/s0925-9635(98)00419-1
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Growth and characterization of phosphorus doped n-type diamond thin filmsDiamond and Related Materials, 1998
- High carrier mobility in polycrystalline thin film diamondApplied Physics Letters, 1998
- A thin film diamond p-channel field-effect transistorApplied Physics Letters, 1997
- Study of the effect of hydrogen on transport properties in chemical vapor deposited diamond films by Hall measurementsApplied Physics Letters, 1996
- Fabrication of Metal-Insulator-Semiconductor Devices Using Polycrystalline Diamond FilmJapanese Journal of Applied Physics, 1991
- An ion-implanted diamond metal-insulator-semiconductor field-effect transistorIEEE Electron Device Letters, 1991
- The electrical properties and device applications of homoepitaxial and polycrystalline diamond filmsProceedings of the IEEE, 1991
- Diamond synthesis from gas phase in microwave plasmaJournal of Crystal Growth, 1983
- Vapor growth of diamond on diamond and other surfacesJournal of Crystal Growth, 1981
- The nature of the acceptor centre in semiconducting diamondJournal of Physics C: Solid State Physics, 1971