Characteristics of zinc oxide thin films prepared by r.f. magnetron-mode electron cyclotron resonance sputtering
- 1 February 1995
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 257 (1) , 22-27
- https://doi.org/10.1016/0040-6090(94)06325-7
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Characteristics of piezoelectric ZnO films deposited by RF mode electron cyclotron resonance sputtering systemElectronics Letters, 1992
- Crystal structures and optical properties of ZnO films prepared by sputtering-type electron cyclotron resonance microwave plasmaJournal of Vacuum Science & Technology A, 1989
- An electron cyclotron resonance plasma deposition technique employing magnetron mode sputteringJournal of Vacuum Science & Technology A, 1988
- Reactive synthesis of well-oriented zinc-oxide films by means of the facing targets sputtering methodJournal of Applied Physics, 1988
- Measuring mode propagation losses of integrated optical waveguides: a simple methodApplied Optics, 1983
- Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance PlasmaJapanese Journal of Applied Physics, 1983
- Crystallographic Character of ZnO Thin Film Formed at Low Sputtering Gas PressureJapanese Journal of Applied Physics, 1982
- High-Energy Neutral Atoms in the Sputtering of ZnOJapanese Journal of Applied Physics, 1981
- Physical Structure of DC Diode Sputtered ZnO Films and its Influence on the Effective Electromechanical Coupling FactorsJapanese Journal of Applied Physics, 1974
- Theory of Prism–Film Coupler and Thin-Film Light GuidesJournal of the Optical Society of America, 1970