Recombination lifetimes in undoped, low-band gap InAsyP1−y/InxGa1−xAs double heterostructures grown on InP substrates
- 19 February 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (8) , 1092-1094
- https://doi.org/10.1063/1.1350432
Abstract
High-quality, thin-film, lattice-matched (LM) InAsyP1−y/InxGa1−xAs double heterostructures (DHs) have been grown lattice mismatched on InP substrates using atmospheric-pressure metalorganic vapor-phase epitaxy. The low-band gap InxGa1−xAs layers in the DHs have room-temperature band gaps that range from 0.47 to 0.6 eV. Both the optical and electronic properties of these films have been extensively measured. The band-to-band photoluminescence is quite strong and comparable to that found for LM InP/In0.53Ga0.47As DHs grown on InP. Recombination lifetime measurements of undoped DH structures show minority-carrier lifetimes in excess of 1 μs in most cases. The earlier properties make the band gap-flexible InAsyP1−y/InxGa1−xAs DH system attractive for applications in high-performance, infrared-sensitive devices.Keywords
This publication has 8 references indexed in Scilit:
- Recombination lifetime of In0.53Ga0.47As as a function of doping densityApplied Physics Letters, 1998
- GaxIn1−xAs thermophotovoltaic convertersSolar Energy Materials and Solar Cells, 1996
- Ultra-high frequency photoconductive decay for measuring recombination lifetime in siliconAIP Conference Proceedings, 1996
- Recombination lifetime of InxGa1−xAs ternary alloysAIP Conference Proceedings, 1995
- Intensity-dependent minority-carrier lifetime in III-V semiconductors due to saturation of recombination centersJournal of Applied Physics, 1991
- Minority-carrier properties of GaAs on siliconApplied Physics Letters, 1988
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- Electron-Hole Recombination in GermaniumPhysical Review B, 1952