Fast turn-on of an NMOS ESD protection transistor: measurements and simulations
- 30 November 1995
- journal article
- Published by Elsevier in Journal of Electrostatics
- Vol. 36 (1) , 81-92
- https://doi.org/10.1016/0304-3886(95)00023-4
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- On bistable behavior and open-base breakdown of bipolar transistors in the avalanche regime-modeling and applicationsIEEE Transactions on Electron Devices, 1992
- Multiple equilibrium points and their significance in the second breakdown of bipolar transistorsIEEE Journal of Solid-State Circuits, 1981
- Ionization Rates for Holes and Electrons in SiliconPhysical Review B, 1957