Semiconductor physics and channeling

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Abstract
Despite early predictions, channeling effect measurements have not yet been applied to a broad range of problems in semiconductor physics. The sensitivity of the present techniques to dopant atoms and lattice disorder is not high enough to be of general interest and the interpretation of experimental data is often uncertain. One clear area of application is in the field of heavily doped or highly disordered semiconductors; ion implantation is the classic example in this category. Other examples include diffusion, alloying, epitaxial layers, heterojunctions, and compensation effects.