Numerical simulation of intrinsic bistability and high-frequency current oscillations in resonant tunneling structures
- 25 February 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 66 (8) , 1078-1081
- https://doi.org/10.1103/physrevlett.66.1078
Abstract
Intrinsic high-frequency oscillations (≊2.5 THz) in current and corresponding quantum-well density have been simulated for the first time for a fixed-bias voltage in the negative differential resistance (NDR) region of the current-voltage (I-V) characteristics of a resonant tunneling diode. Scattering and self-consistency are included. Hysteresis and ‘‘plateaulike’’ behavior of the time-averaged I-V curve are simulated in the NDR region. Intrinsic bistability is manifested by the phenomenon of unstable electron charge buildup and ejection from the quantum well.Keywords
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