Control of nitrogen incorporation in ZnTe:N grown by molecular-beam epitaxy using Ar dilution in a N plasma source
- 1 November 1994
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (9) , 5214-5217
- https://doi.org/10.1063/1.357190
Abstract
The use of Ar dilution in a N plasma source has been used to achieve control of both electrical and optical properties of p‐type ZnTe:N grown by molecular‐beam epitaxy. Photoluminescence data are presented that show the transition from ‘‘pure’’ ZnTe emission to that indicative of heavily N‐doped ZnTe. A new principal bound‐exciton line associated with N impurities is observed at 2.3685 eV. An anomalous red shift in the corresponding donor‐acceptor pair peak energy with increasing N concentration is observed at high N concentration and is attributed to the effects of N impurity banding. Trends in p‐type conductivity confirmed the ability to control hole concentrations using Ar dilution.This publication has 13 references indexed in Scilit:
- Photoluminescence and p-type conductivity in CdTe:N grown by molecular beam epitaxyJournal of Applied Physics, 1994
- Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSeJournal of Crystal Growth, 1994
- Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma sourceApplied Physics Letters, 1993
- Effects of thermal strain on the optical properties of heteroepitaxial ZnTePhysical Review B, 1992
- Heavily doped p-ZnSe:N grown by molecular beam epitaxyApplied Physics Letters, 1991
- p-type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growthApplied Physics Letters, 1990
- Photoluminescence properties of MOVPE grown ZnTe layers on (100) GaAs and (100) GaSbJournal of Crystal Growth, 1990
- Chemical preparation of GaSb(001) substrates prior to MBESemiconductor Science and Technology, 1989
- Possible identification of zinc-vacancy–donor-impurity complexes in zinc telluride by optically detected magnetic resonancePhysical Review B, 1986
- A genuine neutral double acceptor in a II-VI semiconductor-SiTe(?) in ZnTeJournal of Physics C: Solid State Physics, 1985