On the gettering efficiency of crystal defects in silicon
- 16 July 1984
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 84 (1) , 143-147
- https://doi.org/10.1002/pssa.2210840117
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- Determination of Semiconductor Parameters and of the Vertical Structure of Devices by Numerical Analysis of Energy-Dependent EBIC MeasurementsPhysica Status Solidi (a), 1983
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- EBIC/TEM Studies on the Relation between Electrical Properties, Crystallographic Structure, and Interaction with Point Defects of Epitaxial Stacking Faults in SiliconCrystal Research and Technology, 1982
- Formation of clean stacking faults and oxide microdefects in Czochralski siliconJournal of Applied Physics, 1981
- On the sensitivity of the EBIC technique as applied to defect investigations in siliconPhysica Status Solidi (a), 1981
- Thermally Induced Defect Behavior and Effective Intrinsic Gettering Sink in Silicon WafersJournal of the Electrochemical Society, 1981
- The Identification, Annihilation, and Suppression of Nucleation Sites Responsible for Silicon Epitaxial Stacking FaultsJournal of the Electrochemical Society, 1976