The influence of gas‐phase etch removal, deposition temperature and substrate properties on the crystallographic perfection of silicon epitaxial layers
- 1 January 1983
- journal article
- Published by Wiley in Crystal Research and Technology
- Vol. 18 (12) , 1521-1531
- https://doi.org/10.1002/crat.2170181216
Abstract
No abstract availableKeywords
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