Preparation and gas-sensing properties of α-Fe2O3 thin films
- 1 July 1995
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (7) , 799-804
- https://doi.org/10.1007/bf02653327
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Compositional and structural analysis of aluminum oxide films prepared by plasma-enhanced chemical vapor depositionThin Solid Films, 1994
- Low-temperature atmospheric-pressure chemical vapor deposition of tungsten oxide thin filmsThin Solid Films, 1993
- Characterization of zirconium dioxide film formed by plasma enhanced metal-organic chemical vapor depositionThin Solid Films, 1993
- The effect of substrate temperature on the composition and growth of tantalum oxide thin films deposited by plasma-enhanced chemical vapour depositionThin Solid Films, 1991
- Indium tin oxide thin films prepared by chemical vapour depositionThin Solid Films, 1991
- Characteristics of α-Fe2O3 thick film gas sensorsThin Solid Films, 1991
- The role of surface reactions in monosilane pyrolysisThe Journal of Chemical Physics, 1988
- Enhancement of Gas Sensitivity by Controlling Microstructure of α–Fe2O3 CeramicsJapanese Journal of Applied Physics, 1983
- Some Electrical Properties of γ-Fe2O3 CeramicsJapanese Journal of Applied Physics, 1983
- Effects of Sulfate Ion on Gas Sensitive Properties of α-Fe2O3 CeramicsJapanese Journal of Applied Physics, 1982