Dynamic behavior of pulsed-laser annealing in ion-implanted silicon: Measurement of the time dependent optical reflectance
- 19 March 1979
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 70 (4) , 332-334
- https://doi.org/10.1016/0375-9601(79)90140-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Laser annealing of arsenic implanted siliconPhysics Letters A, 1977
- Picosecond Ellipsometry of Transient Electron-Hole Plasmas in GermaniumPhysical Review Letters, 1974
- Recombination in strongly excited siliconSolid State Communications, 1971
- Reflectivity Enhancement of Semiconductors by Q-Switched Ruby LasersJournal of Applied Physics, 1968