Effects of gamma-ray irradiation on thin-gate-oxide VDMOSFET characteristics
- 1 June 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 38 (6) , 1510-1515
- https://doi.org/10.1109/16.81647
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- A new VDMOSFET structure with reduced reverse transfer capacitanceIEEE Transactions on Electron Devices, 1989
- High-frequency high-density converters for distributed power supply systemsProceedings of the IEEE, 1988
- Radiation hard 1.0μm CMOS technologyIEEE Transactions on Nuclear Science, 1987
- Power semiconductors: Fast, tough, and compact: MOS field-effect transistors and gate turnoff thyristors are bringing new levels of performance in switching frequencies and current and voltage ratingsIEEE Spectrum, 1987
- Study of the switching performance of a power MOSFET circuitPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- Radiation Effects in MOS Capacitors with Very Thin Oxides at 80degKIEEE Transactions on Nuclear Science, 1984
- Measurement of Radiation-Induced Interface Traps Using MOSFETsIEEE Transactions on Nuclear Science, 1984
- Power semiconductors: Switching lots of watts at high speeds: State-of-the-art development yields solid-state devices capable of handling over 10 million wattsIEEE Spectrum, 1981
- Charge Yield and Dose Effects in MOS Capacitors at 80 KIEEE Transactions on Nuclear Science, 1976