Effects on InP surface trap states of i n s i t u etching and phosphorus-nitride deposition

Publisher Website
Google Scholar
Abstract
Effects of in situ etching of InP surfaces with PCl3 followed by low‐temperature in situ chemical vapor deposition of phosphorus‐nitride in a phosphorus‐rich ambiance using NH3/PCl3/H2 on trap states of the interfaces were studied. The breakdown field of the phosphorus‐nitride films was as high as 1×107 V cm−1 and the films showed trap‐assisted conduction in high electric field with resistivity higher than 1×1014 Ω cm near the electric field of 1×107 V cm−1. Interface properties were found to be critically dependent upon PCl3 molar fraction, both the etching and deposition time, and the etching and deposition temperature. The frequency dispersion of capacitance‐voltage characteristics in accumulation was about 3.3% for the frequency range from 10 kHz to 1 MHz. The hysteresis was as low as 0.17 V for the field electrode voltage swept between −6 and +6 V. The density of interface trap states, Nss, was 2×1011 cm−2 eV−1 at about 0.3 eV below the conduction‐band edge of InP and was 8×1011 cm−2 eV−1 near the bulk Fermi level.