Electrolyte electroreflectance in the characterization of HgCdTe heterostructures

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Abstract
We have used the technique of electrolyte electroreflectance (EER) coupled with electrochemical etching to profile through epitaxial layers and heterostructures of Hg1−xCdxTe. The need for proper electrochemical control during EER measurements is discussed. The resolution achieved in both composition, Δx=±0.002, and etch depth, ±30 Å, has made possible the observation of the variations in composition at the ambient/epilayer, epilayer/substrate, and high‐x/low‐x interfaces. Good correlations of the profiles observed have been obtained with secondary ion mass spectroscopy, electron dispersive x‐ray diffraction, and Rutherford backscattering measurements. The variation of the broadening parameter Γ at these interfaces is also discussed.

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