Observation of local lattice distortion induced by In doping in GaAs
- 21 July 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (3) , 161-163
- https://doi.org/10.1063/1.97211
Abstract
The In concentration dependence of newly observed Cr‐related luminescence lines has been systematically investigated by a low‐temperature photoluminescence (PL) method in In,Cr‐codoped GaAs. As a result, it has been found that the luminescence center of these In,Cr‐related PL lines is a complex of InGa‐CrGa‐VAs. Furthermore, their relative peak positions with respect to the well‐known Cr‐VAs PL line have been analyzed by using uniaxial stress data, the result suggesting that local lattice distortion of about 1% is induced by In doping in GaAs.Keywords
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