Al 2 O 3 ‐based surface passivation and insulated gate structure for AlGaN/GaN HFETs
- 24 November 2003
- journal article
- research article
- Published by Wiley in physica status solidi (c)
- No. 7,p. 2380-2384
- https://doi.org/10.1002/pssc.200303446
Abstract
No abstract availableKeywords
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