Electronic structure of delta-doped quantum well as a function of temperature
- 13 January 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (2) , 212-213
- https://doi.org/10.1063/1.118369
Abstract
We report on the electronic structure of a delta-doped quantum well of B in Si as a function of temperature from 0 K to room temperature. The calculation is carried out self-consistently in the framework of a Hartree approximation. The energy levels and the occupation number of the discrete states is reported. We conclude that the temperature is not an important factor below 60 K. If temperature is greater than 80 K the level positions are shifted but the changes in carrier concentration are not significant. We give a possible qualitative explanation of the widths of the intersubband absorption peaks.Keywords
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