Ion channeling in textured polycrystalline diamond films
- 1 August 1993
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (3) , 2134-2136
- https://doi.org/10.1063/1.354741
Abstract
Channeling of H+ and H2+ ions of energies between 1.0 and 2.0 MeV in 〈100〉-textured polycrystalline diamond films grown by microwave plasma-assisted chemical-vapor deposition has been observed with Rutherford backscattering. The width of the orientational distribution of the diamond crystallites as deduced from the measured projectile velocity dependence of the observed channeling angular scans amounted to about 1°.This publication has 9 references indexed in Scilit:
- Textures and morphologies of chemical vapor deposited (CVD) diamondPublished by Elsevier ,2003
- The deposition and characterization of β-SiC and diamond/β-SiC composite filmsDiamond and Related Materials, 1993
- In situ growth rate measurement and nucleation enhancement for microwave plasma CVD of diamondJournal of Materials Research, 1992
- Texture formation in polycrystalline diamond filmsJournal of Applied Physics, 1990
- Texture and some properties of vapor-deposited diamond filmsSurface and Coatings Technology, 1989
- Growth of textured diamond films on foreign substrates from attached seed crystalsApplied Physics Letters, 1989
- Separate estimate of crystalline orientations and scattering centers in polycrystals by backscattering techniqueJournal of Applied Physics, 1976
- Characterization of polycrystalline layers by channelling measurementsThin Solid Films, 1973
- Channeling Studies in Diamond-Type LatticesPhysical Review B, 1969