Effect of UV illumination on the electrical properties of MOS layer structures
- 16 May 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 53 (1) , 253-262
- https://doi.org/10.1002/pssa.2210530128
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Surface-state generation on MOS capacitors irradiated with UV light and electronsPhysica Status Solidi (a), 1976
- Experimental observations of the effects of oxide charge inhomogeneity on fast surface state density from high−frequency MOS capacitance−voltage characteristicsApplied Physics Letters, 1975
- Effects of spatially inhomogeneous oxide charge distribution on the MOS capacitance-voltage characteristicsJournal of Applied Physics, 1974
- Illumination with Ultraviolet Light of MOS CapacitorsPhysica Status Solidi (a), 1974
- Contributions of Oxygen, Silicon, and Hydrogen to the Interface States of an Si ‐ SiO2, InterfaceJournal of the Electrochemical Society, 1974
- Electrochemical Charging of Thermal SiO2 Films by Injected Electron CurrentsJournal of Applied Physics, 1971
- Vacuum Ultraviolet Radiation Effects in SiO2IEEE Transactions on Nuclear Science, 1971
- Effects of Metallic Doping on Ionization Damage in MOS FETSIEEE Transactions on Nuclear Science, 1969
- Characteristics of Thermal Annealing of Radiation Damage in MOSFET'sJournal of Applied Physics, 1968
- Effects of ionizing radiation on oxidized silicon surfaces and planar devicesProceedings of the IEEE, 1967