Influence of the Cs concentration on the formation of MCs+ in SIMS analysis
- 1 January 1995
- journal article
- research article
- Published by Wiley in Surface and Interface Analysis
- Vol. 23 (1) , 38-43
- https://doi.org/10.1002/sia.740230106
Abstract
This study, investigates the influence of the Cs concentration on the formation of MCs+ions (SiCs+ and Cs2+) in a Si wafer. The Cs concentration was varied by: Studying the surface transition period in a Si wafer under Cs+ bombardment. Profiling a Cs‐implanted Si sample. Investigating different Cs+ bombarding conditions which generate different Cs concentrations in silicon under a steady‐state regime. The results support the recombination model for the formation of the MCs+ ions. From this model, a quantitative evaluation of the ionization probability of Cs0 was obtained.Keywords
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