High-quality CdTe(100)/GaAs(100) grown by hot-wall epitaxy using gold tube radiation shield
- 1 June 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 130 (3-4) , 617-621
- https://doi.org/10.1016/0022-0248(93)90551-7
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Strain relaxation of CdTe(100) layers grown by hot-wall epitaxy on GaAs(100) substratesJournal of Applied Physics, 1990
- Photoluminescence spectroscopy of CdTe grown by photoassisted MBEJournal of Crystal Growth, 1990
- X-ray rocking curves from (100) and (111) CdTe grown on (100) GaAs by hot wall epitaxyApplied Physics Letters, 1989
- Low-temperature photoluminescence from CdTe grown by hot-wall epitaxy on GaAsApplied Physics Letters, 1989
- Growth of CdTe on GaAs by hot-wall epitaxy and its stress relaxationJournal of Applied Physics, 1989
- Static atomic displacements in a CdTe epitaxial layer on a GaAs substrateApplied Physics Letters, 1987
- High quality CdTe epilayers on GaAs grown by hot-wall epitaxyApplied Physics Letters, 1986
- Low defect density CdTe(111)-GaAs(001) heterostructures by molecular beam epitaxyApplied Physics Letters, 1985
- Photoluminescent properties of films of CdTe on glass grown by a hot-wall-close space vapor transport methodJournal of Applied Physics, 1984
- Hot wall epitaxyThin Solid Films, 1978