Implanted Dopant-Defect Interactons in GaAs

This publication has 11 references indexed in Scilit:

• Local structure of S impurities in implanted GaAs
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1987
• Local Structure of S Impurities in GaAs
  Physical Review Letters, 1986
• Ion implantation for high-speed III–V ICs
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
• Mechanisms of amorphization and recrystallization in ion implanted III–V compound semiconductors
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
• Solid solubility limits in ion-implanted gallium arsenide
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
• Doping of III–V compound semiconductors by ion implantation
  Nuclear Instruments and Methods in Physics Research, 1983
• Compound Semiconductors
  Published by Elsevier ,1982
• The electrical characteristics of ion implanted compound semiconductors
  Nuclear Instruments and Methods, 1981
• Self-compensation of donors in high-purity GaAs
  Applied Physics Letters, 1975
• Characterization and Substrate-Temperature Dependence of Crystalline State of GaAs Grown by Molecular Beam Epitaxy
  Japanese Journal of Applied Physics, 1975