Compound Semiconductors
- 1 January 1982
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 31 references indexed in Scilit:
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- Pulse annealing deficiencies in GaAsApplied Physics Letters, 1980
- Electron-pulsed diffusion of Se in GaAsApplied Physics Letters, 1980
- Ohmic contacts on n-GaAs produced by laser alloying of Ge filmsElectronics Letters, 1980
- The application of low angle Rutherford backscattering and channelling techniques to determine implantation induced disorder profile distributions in semiconductorsNuclear Instruments and Methods, 1980
- Laser pulse annealing of ion-implanted GaAsJournal of Applied Physics, 1980
- Optical-fibre tap with low insertion lossElectronics Letters, 1979
- Ohmic contacts produced by laser-annealing Te-implanted GaAsApplied Physics Letters, 1978
- Time-resolved reflectivity of ion-implanted silicon during laser annealingApplied Physics Letters, 1978
- Laser reordering of implanted amorphous layers in GaAsSolid-State Electronics, 1978